GTC9926E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

GTC9926E Datasheet Preview — Preview of GTC9926E PDF

Datasheet Details

Part number	GTC9926E
Manufacturer	GTM
File Size	359.89 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GTC9926E_GTM.pdf

GTC9926E Product details

Description

The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

Low on-resistance.
Capable of 2.5V gate drive.
Low drive current.
Surface mount package Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 , VGS@10V Continuous Drain Current3 , VGS@10V Pulsed Drain Current.

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Other Datasheets by GTM

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Published: Oct 5, 2007 |