GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 4.6A .
The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivene.

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Datasheet Specifications

Part number: GTC9926E
Manufacturer: GTM
File Size: 359.89 KB
Datasheet: GTC9926E_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low on-resistance
* Capable of 2.5V gate drive
* Low drive current
* Surface mount package Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.4

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GTC9926E Distributors

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GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GTC9926E-like datasheet