* Package Dimensions REF. A A1 b c D Millimeter Min. Max. 0.05 0.19 0.09 2.90 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 4.30 0.45 0° 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V
GTS9926E Datasheet (389.20 KB)
GTS9926E
GTM
389.20 KB
N-channel enhancement mode power mosfet.
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ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B
GTS9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 4.6.
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