GU60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B GU60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
Features. Simple Drive Requirement. Low Gate Charge. Fast Switching Package Dimensions REF.

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Datasheet Specifications

Part number: GU60L02
Manufacturer: GTM
File Size: 302.16 KB
Datasheet: GU60L02_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚

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