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GU70L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/02B GU70L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9m 6.
The GU70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number
GU70L02
Manufacturer
GTM
File Size
279.05 KB
Datasheet
GU70L02_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation VGS

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