2SC3356W Datasheet, Transistor, Galaxy Semi-Conductor Holdings Limited

2SC3356W Features

• Transistor z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0

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Part number:

2SC3356W

Manufacturer:

Galaxy Semi-Conductor Holdings Limited

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196.65kb

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📄 Datasheet

Description:

Silicon npn transistor.

2SC3356W Application

• Applications z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC3356W Marking R23/R24/R25 Package Code SOT-323 MA

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2SC3356W

Galaxy Semi-Conductor Holdings Limited

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