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1N3212 - Silicon Standard Recovery Diode

1N3212 Description

Silicon Standard Recovery Diode .

1N3212 Features

* High Surge Capability
* Types from 400 V to 600 V VRRM
* Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C,

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Datasheet Details

Part number
1N3212
Manufacturer
GeneSiC
File Size
682.60 KB
Datasheet
1N3212-GeneSiC.pdf
Description
Silicon Standard Recovery Diode

📁 Related Datasheet

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  • 1N3213 - Silicon Rectifier Diodes (Vishay)
  • 1N3213R - STANDARD RECOVERY DIODE (DACO SEMICONDUCTOR)
  • 1N3214 - Silicon Rectifier Diodes (Vishay)

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Silicon Standard Recovery Diode GeneSiC
GeneSiC 1N3212-like datasheet