G3R20MT12K Datasheet - GeneSiC

G3R20MT12K, Silicon Carbide MOSFET

G3R20MT12K 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode

Features

* G3R™ (3rd Generation) Technology
* Low Temperature Coefficient of RDS(ON)
* Lower QG and Smaller RG(INT)
* Low Device Capacitances (COSS, CRSS)
* LoRing™ - Electromagnetically Optimized Design
* Superior Cost-Performance Index
* Robust Body D

Applications

* Solar Inverters
* Motor Drives
* EV Charging
* High Voltage DC-DC Converters
* Switched Mode Power Supplies
* UPS
* Smart Grid Transmission and Distribution
* Induction Heating and Welding Absolute Maximum Ratings (At TC = 25°C Unles

G3R20MT12K-GeneSiC.pdf