G3R20MT17N Datasheet - GeneSiC

G3R20MT17N, Silicon Carbide MOSFET

G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

Features

* G3R™ Technology with +15 V Gate Drive
* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Industry-Leading UIL & Short-Circuit Robustness

Applications

* EV Fast Charging
* Solar Inverters
* Industrial Motor Drives
* Transportation
* Industrial Power Supply
* Smart Grid and HVDC
* Induction Heating and Welding
* Pulsed Power RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Ot

G3R20MT17N-GeneSiC.pdf