G3R20MT12N - Silicon Carbide MOSFET

GeneSiC

G3R20MT12N Description

G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

G3R20MT12N Features

* G3R™ Technology - +15 V / -5 V Gate Drive
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Body Diode
* High Avalanche and Short Circuit Ruggedness

G3R20MT12N Applications

* Solar Inverters
* Motor Drives
* EV Charging
* High Voltage DC-DC Converters
* Switched Mode Power Supplies
* UPS
* Smart Grid Transmission and Distribution
* Induction Heating and Welding Absolute Maximum Ratings (At TC = 25°C Unles

📥 Download Datasheet

G3R20MT12N Datasheet Preview — Preview of G3R20MT12N PDF

Datasheet Details

Part number: G3R20MT12N
Manufacturer: GeneSiC
File Size: 1.15 MB
Datasheet: G3R20MT12N-GeneSiC.pdf
Description: Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC

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