G3R20MT12N Datasheet - GeneSiC

G3R20MT12N, Silicon Carbide MOSFET

G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

Features

* G3R™ Technology - +15 V / -5 V Gate Drive
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Body Diode
* High Avalanche and Short Circuit Ruggedness

Applications

* Solar Inverters
* Motor Drives
* EV Charging
* High Voltage DC-DC Converters
* Switched Mode Power Supplies
* UPS
* Smart Grid Transmission and Distribution
* Induction Heating and Welding Absolute Maximum Ratings (At TC = 25°C Unles

G3R20MT12N-GeneSiC.pdf