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MBR20030CTR - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR20030CTR, a member of the MBR20020CT Silicon Power Schottky Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 20 to 40 V VRRM.
  • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj T.

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Datasheet preview – MBR20030CTR

Datasheet Details

Part number MBR20030CTR
Manufacturer GeneSiC
File Size 536.17 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR20030CTR Datasheet
Additional preview pages of the MBR20030CTR datasheet.

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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT
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