1N4935GP
General Semiconductor
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Glass passivated junction fast switching rectifier.
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1N4935G - FAST RECOVERY GLASS PASSIVATED RECTIFIER
(MIC)
FAST RECOVERY GLASS PASSIVATED RECTIFIER
1N4933G THRU 1N4937G
VOLTAGE RANGE CURRENT
50 to 600 Volts 1.0 Ampere
FEATURES
• Fast switching for high .
1N4935G - 1.0A GLASS PASSIVATED FAST RECOVERY DIODE
(WON-TOP)
®
WON-TOP ELECTRONICS
Features
Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surg.
1N4935G - 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
(Diodes Incorporated)
1N4933G/L - 1N4937G/L
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features
· · · · · · Glass Passivated Die Construction Diffused Junction Fast Swit.
1N4935G - FAST GPP DIODES
(LRC)
LESHAN RADIO COMPANY, LTD.
1N4933G – 1N4937G
FAST GPP DIODES
TYPE
1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
Maximum Peak Reverse
Voltage
Maximum Av.
1N4935G - FAST RECOVERY GLASS PASSIVATED RECTIFIERS
(LITE-ON)
LITE-ON SEMICONDUCTOR
FAST RECOVERY GLASS PASSIVATED RECTIFIERS
FEATURES
Fast switching for high efficiency Glass passivated chip Low reverse leakage .
1N4935G - Glass Passivated Fast Recovery Rectifiers
(JGD)
Features
1N4933G THRU 1N4937G
1.0 Amp. Glass Passivated Fast Recovery Rectifiers
* Low Forward Voltage Drop * High Current Capability * High Reliabi.
1N4935G - FAST RECOVERY RECTIFIER
(HITANO)
HITANO ENTERPRISE CORP.
1N4933G THRU 1N4937G
TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER
VOLTAGE RANGE - 50 to 600 Volts
CURRENT - 1.0 Ampe.
1N4935G - 1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS
(GW)
1N4933G THRU 1N4937G
1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS
FEATURES
* Low forward voltage drop * Low leakage current * High reliability .
1N4935G - Glass Passivated Fast Recovery Rectifiers
(Taiwan Semiconductor)
1N4933G – 1N4937G
Taiwan Semiconductor
1A, 50V - 600V Fast Recovery Rectifier
FEATURES
● AEC-Q101 qualified available ● High efficiency, Low VF ● Hi.
1N4935G - 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
(Diodes)
Features
• Glass Passivated Die Construction • Diffused Junction • Fast Switching for High Efficiency • High Current Capability and Low Forward Voltag.