GSM1012E Datasheet - Globaltech

GSM1012E 20V N-Channel MOSFET

GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

GSM1012E Features

* 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V

* 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V

* 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V

* Low Offset (Error) Voltage

* Low-Voltage Operation

* High-Speed Circuits

* Low Battery Voltage Operation

* ESD Protected

* S

GSM1012E-Globaltech.pdf

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Datasheet Details

Part number:

GSM1012E

Manufacturer:

Globaltech

File Size:

0.97 MB

Description:

20v n-channel mosfet.

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GSM1012E GSM1012E 20V N-Channel MOSFET Globaltech

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