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GSM1012E - 20V N-Channel MOSFET

GSM1012E Description

20V N-Channel Enhancement Mode MOSFET Product .
GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

GSM1012E Features

* 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V
* 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V
* 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V
* Low Offset (Error) Voltage
* Low-Voltage Operation
* High-Speed Circuits
* Low Battery Voltage Operation
* ESD Protected
* S

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Datasheet Details

Part number
GSM1012E
Manufacturer
Globaltech
File Size
0.97 MB
Datasheet
GSM1012E-Globaltech.pdf
Description
20V N-Channel MOSFET

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20V N-Channel MOSFET Globaltech
Globaltech GSM1012E-like datasheet