GSM1012 - N-Channel MOSFET
GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial
GSM1012 Features
* 20V/0.6A,RDS(ON)=360m@VGS=4.5V
* 20V/0.5A,RDS(ON)=420m@VGS=2.5V
* 20V/0.4A,RDS(ON)=560m@VGS=1.8V
* Low Offset (Error) Voltage
* Low-Voltage Operation
* High-Speed Circuits
* Low Battery Voltage Operation
* SOT-523 package design Appli
