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GSM1012 - N-Channel MOSFET

Description

GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/0.6A,RDS(ON)=360m@VGS=4.5V.
  • 20V/0.5A,RDS(ON)=420m@VGS=2.5V.
  • 20V/0.4A,RDS(ON)=560m@VGS=1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-523 package design.

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Datasheet Details

Part number GSM1012
Manufacturer Globaltech
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet GSM1012 Datasheet

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Full PDF Text Transcription

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20V N-Channel Enhancement Mode MOSFET Product Description GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 20V/0.6A,RDS(ON)=360m@VGS=4.5V „ 20V/0.5A,RDS(ON)=420m@VGS=2.5V „ 20V/0.4A,RDS(ON)=560m@VGS=1.
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