Part number: GSM1012
Manufacturer: Globaltech
File Size: 0.96MB
Download: 📄 Datasheet
Description: N-Channel MOSFET
Part number: GSM1012
Manufacturer: Globaltech
File Size: 0.96MB
Download: 📄 Datasheet
Description: N-Channel MOSFET
* 20V/0.6A,RDS(ON)=360m@VGS=4.5V
* 20V/0.5A,RDS(ON)=420m@VGS=2.5V
* 20V/0.4A,RDS(ON)=560m@VGS=1.8V
* Low Offset (Error) Voltage
* Low-Voltage Operatio.
Features
* 20V/0.6A,RDS(ON)=360m@VGS=4.5V
* 20V/0.5A,RDS(ON)=420m@VGS=2.5V
* 20V/0.4A,RDS(ON)=560m@VGS=1.8.
GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.
Image gallery
TAGS
📁 Related Datasheet
GSM1012E - 20V N-Channel MOSFET
(Globaltech)
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide exc.
GSM1024 - N-channel MOSFET
(Globaltech)
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide exce.
GSM1072K - N-Channel MOSFET
(Globaltech)
GSM1072K
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1072K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to pr.
GSM1072KTFF - 20V N-Channel Enhancement Mode MOSFET
(Globaltech)
GSM1072KTFF
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1072KTFF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology.
GSM1072KX7F - 20V N-Channel Enhancement Mode MOSFET
(Globaltech)
GSM1072KX7F
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1072KX7F, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology.
GSM1073K - P-Channel MOSFET
(Globaltech)
GSM1073K
20V P-Channel Enhancement Mode MOSFET
Product Description
GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to pr.
GSM10N10DF - N-Channel MOSFET
(Globaltech)
GSM10N10DF
100V N-Channel MOSFETs
Product Description
The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON an.
GSM1912 - N-Channel Power MOSFET
(Globaltech)
GSM1912
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to prov.
GSM02N15 - N-Channel MOSFET
(Globaltech)
GSM02N15
150V N Channel MOSFET
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
GSM02P15 - P-Channel MOSFET
(Globaltech)
GSM02P15
150V P-Channel Enhancement MOSFETs
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS.
