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GSM1072KX7F - 20V N-Channel Enhancement Mode MOSFET

General Description

GSM1072KX7F, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V.
  • 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V.
  • 20V/0.2A, RDS(ON)=800mΩ@VGS=1.8V.
  • 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.5V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • ESD Protected.
  • SOT-523 package design.

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Datasheet Details

Part number GSM1072KX7F
Manufacturer Globaltech
File Size 488.86 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSM1072KX7F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM1072KX7F 20V N-Channel Enhancement Mode MOSFET Product Description GSM1072KX7F, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features ◼ 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V ◼ 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V ◼ 20V/0.2A, RDS(ON)=800mΩ@VGS=1.8V ◼ 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.