GSM1072K Description
GSM1072K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM1072K Key Features
- 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
- 20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-723 package design