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GSM1073K - P-Channel MOSFET

General Description

GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.45A,RDS(ON)=650mΩ@VGS=-4.5V.
  • -20V/-0.35A,RDS(ON)=900mΩ@VGS=-2.5V.
  • -20V/-0.25A,RDS(ON)=1500mΩ@VGS=-1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • ESD Protection.
  • SOT-723 package design.

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Datasheet Details

Part number GSM1073K
Manufacturer Globaltech
File Size 664.32 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM1073K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM1073K 20V P-Channel Enhancement Mode MOSFET Product Description GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ -20V/-0.45A,RDS(ON)=650mΩ@VGS=-4.5V „ -20V/-0.35A,RDS(ON)=900mΩ@VGS=-2.5V „ -20V/-0.25A,RDS(ON)=1500mΩ@VGS=-1.