GSM1073K Description
GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM1073K Key Features
- 20V/-0.45A,RDS(ON)=650mΩ@VGS=-4.5V
- 20V/-0.35A,RDS(ON)=900mΩ@VGS=-2.5V
- 20V/-0.25A,RDS(ON)=1500mΩ@VGS=-1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protection
- SOT-723 package design