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GSM3414S

20V N-Channel Enhancement Mode MOSFET

GSM3414S Features

* 20V/5.8A,RDS(ON)=25mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design Applications

* Portable Equipment

* Battery Powered System

* Net Working System GSM3414S Pa

GSM3414S General Description

GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

GSM3414S Datasheet (367.00 KB)

Preview of GSM3414S PDF

Datasheet Details

Part number:

GSM3414S

Manufacturer:

Globaltech

File Size:

367.00 KB

Description:

20v n-channel enhancement mode mosfet.

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TAGS

GSM3414S 20V N-Channel Enhancement Mode MOSFET Globaltech

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