GSM3415 Datasheet - Globaltech

GSM3415 P-Channel MOSFET

GSM3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge. These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss .

GSM3415 Features

* -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V

* -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V

* -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3S package design Applications

GSM3415-Globaltech.pdf