GSM3611P Datasheet (Globaltech)

GSM3611P, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSM3611P Features

* -30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V

* Fast switching

* Suit for -2.5V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments