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GSM3611P

P-Channel MOSFET

GSM3611P Features

* -30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V

* Fast switching

* Suit for -2.5V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments

GSM3611P General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM3611P Datasheet (619.21 KB)

Preview of GSM3611P PDF

Datasheet Details

Part number:

GSM3611P

Manufacturer:

Globaltech

File Size:

619.21 KB

Description:

P-channel mosfet.

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TAGS

GSM3611P P-Channel MOSFET Globaltech

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