GSM3612P

30V N-Channel MOSFETs

Globaltech

GSM3612P Features

* 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 2.5V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* LED applications GSM3612P Packages & Pin Assignments

GSM3612P General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM3612P Datasheet (504.79 KB)

GSM3612P Datasheet Preview — Preview of GSM3612P PDF

Datasheet Details

Part number:

GSM3612P

Manufacturer:

Globaltech

File Size:

504.79 KB

Description:

30v n-channel mosfets.

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GSM3612P 30V N-Channel MOSFETs Globaltech

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GSM3612P Features

GSM3612P General Description

Datasheet Details

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Description:

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