GSM6601 Datasheet - Globaltech

GSM6601 MOSFET

GSM6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pi.

GSM6601 Features

* N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON)=74mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=90mΩ@VGS=2.5V

* P-Channel -30V/-2.6A,RDS(ON)=115mΩ@VGS=-10V -30V/-2.0A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=235mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS (ON)

* Ex

GSM6601 Datasheet (1.46 MB)

GSM6601 Datasheet Preview — Preview of GSM6601 PDF

Datasheet Details

Part number:

GSM6601

Manufacturer:

Globaltech

File Size:

1.46 MB

Description:

Mosfet.

📁 Related Datasheet

GSM6604 MOSFET (Globaltech)

GSM6332 MOSFET (Globaltech)

GSM6562 N-Channel Power MOSFET (Globaltech)

GSM6907Z 60V P-Channel MOSFETs (Globaltech)

GSM6911P P-Channel MOSFET (Globaltech)

GSM02N15 N-Channel MOSFET (Globaltech)

GSM02P15 P-Channel MOSFET (Globaltech)

GSM02P15JZF P-Channel MOSFET (Globaltech)

GSM0910P N-Channel MOSFET (Globaltech)

GSM1012 N-Channel MOSFET (Globaltech)

TAGS

GSM6601 MOSFET Globaltech

Image Gallery

GSM6601 Distributor