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GSM6601 MOSFET

GSM6601 Description

GSM6601 30V N & P Pair Enhancement Mode MOSFET Product .
GSM6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

GSM6601 Features

* N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON)=74mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=90mΩ@VGS=2.5V
* P-Channel -30V/-2.6A,RDS(ON)=115mΩ@VGS=-10V -30V/-2.0A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=235mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS (ON)
* Ex

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Datasheet Details

Part number
GSM6601
Manufacturer
Globaltech
File Size
1.46 MB
Datasheet
GSM6601-Globaltech.pdf
Description
MOSFET

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MOSFET Globaltech
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