GSM7002T Datasheet (Globaltech) - Dual N-Channel MOSFET

GSM7002T, Dual N-Channel MOSFET

The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications r

GSM7002T Features

* 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V

* 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-363 package design Applications

* Drivers: Relays, Soleno