GSM0910P Datasheet - Globaltech

GSM0910P N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM0910P Features

* 100V, 2A, RDS(ON)=200mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* LED applications Packages & Pin Assig

GSM0910P-Globaltech.pdf

GSM0910P Datasheet Preview — Preview of GSM0910P PDF

Datasheet Details

Part number:

GSM0910P

Manufacturer:

Globaltech

File Size:

574.71 KB

Description:

N-channel mosfet.

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GSM0910P GSM0910P N-Channel MOSFET Globaltech

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