GSM0910P - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSM0910P Features
* 100V, 2A, RDS(ON)=200mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* SOT-23 package design Applications
* Notebook
* Load Switch
* LED applications Packages & Pin Assig
