GSMDEW2206 Datasheet (Globaltech) - Dual N-Channel MOSFET

GSMDEW2206, Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

GSMDEW2206 Features

* 20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* G-S ESD protection diode embedded

* Green Device Available

* TSSOP-8 package design Applications

* Notebook