GSMD35N15 Datasheet - Globaltech

GSMD35N15 - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMD35N15 Features

* 150V, 35A, RDS(ON)=46mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* VGS Guaranteed ±25V

* Green Device Available

* TO-252-2L package design Applications

* Motor Drive

* DC-DC Switching

* LED Applications

* P

GSMD35N15-Globaltech.pdf