GSMDC0966X Datasheet - Globaltech

GSMDC0966X - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDC0966X Features

* 100V, 45A, RDS(ON)=18mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN5X6-8L package design Applications

* Networking

* Load Switch

* LED Applications Packages & Pin

GSMDC0966X-Globaltech.pdf