GSMDC2209V Datasheet - Globaltech

GSMDC2209V - Dual P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDC2209V Features

* -20V, -7.5A, RDS(ON)=33mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* DFN3X3-8L package design Applications

* MB / VGA / Vcore

* POL Applications

* Networking Packages & Pin Assignments GSMDC2209

GSMDC2209V-Globaltech.pdf