GSMDB2116S N+P Dual-Channel MOSFET

Globaltech

Description

GSMDB2116S 20V N+P Dual Channel MOSFETs Product .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Datasheet Specifications

Part number: GSMDB2116S
Manufacturer: Globaltech
File Size: 899.80 KB
Datasheet: GSMDB2116S-Globaltech.pdf
Description: N+P Dual-Channel MOSFET

Features

* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
* Fast switching

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GSMDB2116S N +P Dual-Channel MOSFET Globaltech

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