GSMDB2116S Datasheet - Globaltech

GSMDB2116S - N+P Dual-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

GSMDB2116S Features

* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V

* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V

* Fast switching

* Suit for -1.8V/1.8V Gate Drive Applications

* Green Device Available

* DFN2X2-6L package design Applications

* Notebook

* Load

GSMDB2116S-Globaltech.pdf