GSMDB2116S Datasheet, Mosfet, Globaltech

GSMDB2116S Features

• Mosfet
• N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
• P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
• Fast switching
• Suit for -1.8V/1.8V Gate Drive Applications

PDF File Details

Part number:

GSMDB2116S

Manufacturer:

Globaltech

File Size:

899.80kb

Download:

📄 Datasheet

Description:

N+p dual-channel mosfet. These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has

GSMDB2116S Application

• Applications Features
• N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
• P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
• Fast sw

TAGS

GSMDB2116S

Globaltech

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