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GSMDB2116S Datasheet - Globaltech

GSMDB2116S, N+P Dual-Channel MOSFET

GSMDB2116S 20V N+P Dual Channel MOSFETs Product .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
* Fast switching

GSMDB2116S-Globaltech.pdf

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Datasheet Details

Part number:

GSMDB2116S

Manufacturer:

Globaltech

File Size:

899.80 KB

Description:

N+P Dual-Channel MOSFET

GSMDB2116S Distributors

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