GSMD18N20 Datasheet - Globaltech

GSMD18N20 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMD18N20 Features

* 200V, 18A, RDS(ON)=140mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* VGS Guaranteed ±25V

* Green Device Available

* TO-252-2L package Applications

* LED Backlight & Lighting

* UPS

* High Voltage Switching

GSMD18N20-Globaltech.pdf

GSMD18N20 Datasheet Preview — Preview of GSMD18N20 PDF

Datasheet Details

Part number:

GSMD18N20

Manufacturer:

Globaltech

File Size:

498.96 KB

Description:

N-channel mosfet.

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