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GSMDL0910

N-Channel MOSFET

GSMDL0910 Features

* 100V, 3A, RDS(ON)=185mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOT-223 package design Applications

* Notebook

* Load Switch

* LED applications Packages & Pin Assi

GSMDL0910 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDL0910 Datasheet (524.71 KB)

Preview of GSMDL0910 PDF

Datasheet Details

Part number:

GSMDL0910

Manufacturer:

Globaltech

File Size:

524.71 KB

Description:

N-channel mosfet.

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TAGS

GSMDL0910 N-Channel MOSFET Globaltech

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