GSMDL0910 Datasheet (Globaltech)

GSMDL0910, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDL0910 Features

* 100V, 3A, RDS(ON)=185mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOT-223 package design Applications

* Notebook

* Load Switch

* LED applications Packages & Pin Assi