Part number:
GPT04N60
Manufacturer:
Greatpower
File Size:
1.37 MB
Description:
Power field effect transistor.
* This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converte
GPT04N60
Greatpower
1.37 MB
Power field effect transistor.
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