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GPT04N60A Datasheet - Greatpower

GPT04N60A - POWER FIELD EFFECT TRANSISTOR

GPT04N60A Features

* This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converte

GPT04N60A-Greatpower.pdf

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Datasheet Details

Part number:

GPT04N60A

Manufacturer:

Greatpower

File Size:

402.22 KB

Description:

Power field effect transistor.

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