GPT08N65D, GPT08N65 POWER FIELD EFFECT TRANSISTOR

Description

GPT08N65 / GPT08N65D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance.

📥 Download Datasheet

GPT08N65D Datasheet Preview — This datasheet PDF includes multiple part numbers: GPT08N65D, GPT08N65. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: GPT08N65D, GPT08N65
Manufacturer: Greatpower
File Size: 1.18 MB
Datasheet: GPT08N65-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: GPT08N65D, GPT08N65.
Please refer to the document for exact specifications by model.

Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Reduced Gate Charge Ultra Low On-Res

GPT08N65D Distributors

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GPT08N65 POWER FIELD EFFECT TRANSISTOR Greatpower

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