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GPT08N60 POWER FIELD EFFECT TRANSISTOR

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Description

GPT08N60 / GPT08N60D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance.

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Datasheet Specifications

Part number
GPT08N60
Manufacturer
Greatpower
File Size
1.18 MB
Datasheet
GPT08N60-Greatpower.pdf
Description
POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Reduced Gate Charge Ultra Low On-Res

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