GPT09N50 POWER FIELD EFFECT TRANSISTOR

Description

GPT09N50 GPT09N50D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination. Robust High Voltage Termination scheme to provide enhanced voltage-blocking ca.

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Datasheet Specifications

Part number: GPT09N50
Manufacturer: Greatpower
File Size: 292.77 KB
Datasheet: GPT09N50-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination
* Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability
* Avalanche Energy Specified without degrading performance over time. In addition, this
* Source-to-Drain Diode Recovery Time Comparable to a

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against u

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GPT09N50 POWER FIELD EFFECT TRANSISTOR Greatpower

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