GPT09N50 - POWER FIELD EFFECT TRANSISTOR

Datasheet Details

Part number	GPT09N50
Manufacturer	Greatpower
File Size	292.77 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT09N50-Greatpower.pdf

This high voltage MOSFET uses an advanced termination.
Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified without degrading performance over time. In addition, this.
Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy.
Diode is Characterized for Use in Bridge Circuits efficie.

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Published: Nov 8, 2017 |