GPT09N50D

POWER FIELD EFFECT TRANSISTOR

* This high voltage MOSFET uses an advanced termination

* Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability

* Avalanche Energy Specified without degrading performance over time. In addition, this

* Source-to-Drain Diode Recovery Time Comparable to a

GPT09N50D

Greatpower

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Power field effect transistor.

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