GPT09N60
Greatpower
1.17MB
Power field effect transistor. FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degra
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GPT09N60D - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT09N60 / GPT09N60D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination scheme to pro.
GPT09N45 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT09N45
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
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GPT09N50 GPT09N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination Robust High V.
GPT09N50D - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT09N50 GPT09N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination Robust High V.
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GPT09N70 / GPT09N70D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination scheme to pro.
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(Greatpower)
GPT09N70 / GPT09N70D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination scheme to pro.
GPT01N65A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT01N65A
POWER FIELD EFFECT TRANSISTOR
FEATURES
This high voltage MOSFET uses an advanced termination scheme to provide enhance.
GPT02N50 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT02N50
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the av.
GPT02N50A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT02N50A
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the a.
GPT02N60 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT02N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the a.