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026M

N-Channel Enhancement Mode Power MOSFET

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026M Datasheet (418.83 KB)

Preview of 026M PDF Datasheet

Datasheet Details

Part number:

026M

Manufacturer:

H&M Semiconductor

File Size:

418.83 KB

Description:

N-channel enhancement mode power mosfet

026M Features

* VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package D G S Schematic diagram 3D 026M G1 2S Marking and pin Assignment Application

* Battery protection

026M General Description

The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES
* VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RD.

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026M N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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