026M - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	026M
Manufacturer	H&M Semiconductor
File Size	418.83 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	026M-HMSemiconductor.pdf

The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3D 026M G1 2S Marking and pin Assignment.

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Published: Apr 12, 2021 |