Datasheet4U Logo Datasheet4U.com

HM100N03 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =100A RDS(ON).

📥 Download Datasheet

Datasheet preview – HM100N03

Datasheet Details

Part number HM100N03
Manufacturer H&M Semiconductor
File Size 567.28 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM100N03 Datasheet
Additional preview pages of the HM100N03 datasheet.

📁 Similar Datasheet

  • HM100N06P - 60V N-Channel MOSFET (HKZ)
  • HM10414 - 256 x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10414-1 - 256 x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10422 - 256 x 4-Bit Fully Vecoded RAM (Hitachi)
  • HM10470-20 - 4K x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10474 - 1K x 4-Bit Fully Vecoded RAM (Hitachi)
  • HM10480-15 - 16K x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10480F-15 - 16K x 1-Bit Fully Vecoded RAM (Hitachi)
  • HM10484-10 - 4K x 4-Bit Fully Vecoded RAM (Hitachi)
  • HM10490 - 65K x 1-Bit Fully Vecoded RAM (Hitachi)
Other Datasheets by H&M Semiconductor
  • HM100N03D - N-Channel Enhancement Mode Power MOSFET
  • HM100N03GA - N-Channel Enhancement Mode Power MOSFET
  • HM100N03KA - N-Channel Enhancement Mode Power MOSFET
  • HM100P03K - MOSFET
  • HM100P35E - MOSFET
  • HM1084 - 5A LOW DROPOUT POSITIVE REGULATOR
  • HM10DN06D - N-Channel Enhancement Mode Power MOSFET
  • HM10DP06D - P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
HM100N03 N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.
Published: |