HM100N03D
HM100N03D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply e NMMk MPa
Schematic diagram Marking and pin assignment
Package Marking and Ordering Information
Device Marking HM100N03D
Device HM100N03D
Device Package DFN5X6-8L
Reel Size
- Tape width
- Quantity
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