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HM100N03D

Manufacturer: H&M Semiconductor

HM100N03D datasheet by H&M Semiconductor.

HM100N03D datasheet preview

HM100N03D Datasheet Details

Part number HM100N03D
Datasheet HM100N03D-HMSemiconductor.pdf
File Size 334.39 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM100N03D page 2 HM100N03D page 3

HM100N03D Overview

The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM100N03D Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width
  • Quantity
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HM100N03D Distributor

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