HM100N03GA Overview
The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM100N03GA Key Features
- VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Tape width
- Quantity