HM100N03GA Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply 100% UIS TESTED! Schematic diagram Marking and pin assignment DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package HM100N03GA HM100N03GA ')1;/ Reel Size - Tape width - Quantity -...