HM100N03 Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =100A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ) Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply HM100N03 HM100N03 Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-2 top view Package Marking And Ordering Information Device Marking Device Device Package TO-220 Reel Size Tape width Quantity -...