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HM100N03D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =100A RDS(ON).

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Datasheet preview – HM100N03D

Datasheet Details

Part number HM100N03D
Manufacturer H&M Semiconductor
File Size 334.39 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM100N03D Datasheet
Additional preview pages of the HM100N03D datasheet.

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Full PDF Text Transcription

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Description The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.
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