HM100N03GA - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM100N03GA
Manufacturer	H&M Semiconductor
File Size	794.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM100N03GA Datasheet
Additional preview pages of the HM100N03GA datasheet.

The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

📁 Similar Datasheet

Other Datasheets by H&M Semiconductor

Published: Aug 12, 2025 |