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HM100N03GA - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet preview – HM100N03GA

Datasheet Details

Part number HM100N03GA
Manufacturer H&M Semiconductor
File Size 794.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM100N03GA Datasheet
Additional preview pages of the HM100N03GA datasheet.

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Full PDF Text Transcription

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HM100N03GA N-Channel Enhancement Mode Power MOSFET Description The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.
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