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HM3018KR Datasheet - H&M Semiconductor

HM3018KR, N-Channel Enhancement Mode Power MOSFET

Silicon N-channel MOSFET 100 mA, 30 V * .
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HM3018KR-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3018KR

Manufacturer:

H&M Semiconductor

File Size:

248.40 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
* ESD>500V
* We declare that the material of product compliance with RoHS requirements.
* S- Pref

Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed Total power dissipation (Tc=25°C) ID IDP∗1 PD∗2 Channel temperature Tch Storag

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