HM30P03Q - P-Channel Enhancement Mode MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM30P03Q
Manufacturer	H&M Semiconductor
File Size	776.59 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	HM30P03Q Datasheet
Additional preview pages of the HM30P03Q datasheet.

Product details

Description

Marking and pin Assignment Markin g and pin assignment Package Marking and Ordering Information Device Marking Device Device Package HM34 +034 ')1;/ Reel Size - Tape width - Quantity - HM30P03Q -30VDS／±20VGS／-30A(ID) P-Channel Enha ncement Mode MOSFET Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Static Character

Features

VDSS=-30V／VGSS=±20V／ID=-30A RDS(ON)=14mΩ(max. )@VGS=-10V RDS(ON)=22mΩ(max. )@VGS=-4.5V.
Low Dense Cell Design.
Reliable and Rugged.
Advanced trench process technology.

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Published: Jul 1, 2025 |