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HM30SDN02D Datasheet - H&M Semiconductor

HM30SDN02D 20V Half Bridge Dual N-Channel Super Trench Power MOSFET

The HM30SDN02D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dua.

HM30SDN02D Features

* Q1 "High Side" MOSFET Q2 "Low Side" MOSFET

* VDS =20V,ID =30A VDS =20V,ID =30A RDS(ON)

HM30SDN02D-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM30SDN02D

Manufacturer:

H&M Semiconductor

File Size:

673.29 KB

Description:

20v half bridge dual n-channel super trench power mosfet.

HM30SDN02D Distributor

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HM30SDN02D HM30SDN02D 20V Half Bridge Dual N-Channel Super Trench Power MOSFET H&M Semiconductor