HM4822B Datasheet - H&M Semiconductor

HM4822B, Dual N-Channel Enhancement Mode Power MOSFET

HM4822B Dual N-Channel Enhancement Mode Power MOSFET .
The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

HM4822B

Manufacturer:

H&M Semiconductor

File Size:

635.71 KB

Description:

Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson

HM4822B Distributors

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HM4822B Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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