HM4822B - Dual N-Channel Enhancement Mode Power MOSFET
HM4822B Features
* VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current Application
* Power switching application
* Hard Switched and High Frequency Circuits
