HM4822B Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4822B Dual N-Channel Enhancement Mode Power MOSFET .
The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4822B
Manufacturer: H&M Semiconductor
File Size: 635.71 KB
Datasheet: HM4822B-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson

HM4822B Distributors

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HM4822B Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4822B-like datasheet