HM5N20R Datasheet, Mosfet, H&M Semiconductor

HM5N20R Features

• Mosfet
• VDS = 200V,ID =A RDS(ON) < 650mΩ @ VGS=10V (Typ:520mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

HM5N20R

Manufacturer:

H&M Semiconductor

File Size:

850.48kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The HM15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

HM5N20R Application

• Applications General Features
• VDS = 200V,ID =A RDS(ON) < 650mΩ @ VGS=10V (Typ:520mΩ)
• High density cell design for ultra low Rd

TAGS

HM5N20R

H&M Semiconductor

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