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HM5N30PR Datasheet - H&M Semiconductor

HM5N30PR Silicon N-Channel Power MOSFET

VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 1.2 Ω performance and enhance the avalanche energy. The transistor can be used in.

HM5N30PR Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS

HM5N30PR-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM5N30PR

Manufacturer:

H&M Semiconductor

File Size:

649.56 KB

Description:

Silicon n-channel power mosfet.

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HM5N30PR HM5N30PR Silicon N-Channel Power MOSFET H&M Semiconductor

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