Datasheet Details
| Part number | HM5N30PR |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 649.56 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
|
| Part number | HM5N30PR |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 649.56 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
|
VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 1.2 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-89-3L, which accords with the RoHS standard.
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