Part number:
HM5N30PR
Manufacturer:
H&M Semiconductor
File Size:
649.56 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 1.2 Ω performance and enhance the avalanche energy.
The transistor can be used in
HM5N30PR Features
* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS
Datasheet Details
HM5N30PR
H&M Semiconductor
649.56 KB
Silicon n-channel power mosfet.
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